Interlayer boosts precision of silicon etching technique

A new gas-phase metal-assisted chemical etching method uses a thin metal layer to define patterns on silicon, with reactions occurring only at the metal-silicon interface. This approach enables the fabrication of tall, narrow structures with higher precision. The technique is plasma-free and could improve micro- and nanotechnology manufacturing.

This new approach to metal-assisted chemical etching relies on a thin metal layer to guide pattern formation on silicon, with the chemical reaction confined to the interface where metal meets silicon. Because the process operates in the gas phase and requires no plasma, it avoids some of the damage and complexity associated with conventional etching techniques. The method’s precision allows for the creation of tall, narrow silicon features, which are valuable in applications requiring high aspect ratios. By improving control over etching at the microscale and nanoscale, the technique could offer a simpler, more reliable pathway for fabricating advanced devices in fields such as electronics, photonics, and microelectromechanical systems.