Fraunhofer Develops Ultra-Broadband Amplifier Chip for Data Centers and Radar
Researchers at Fraunhofer IAF have built a monolithic microwave integrated circuit amplifier that operates from 4 to 420 GHz with a gain of 11 ± 2 dB. The chip uses 20-nm InGaAs-on-Si HEMTs and delivers low noise and high output power, making it suitable for optical data transmission, precision measurement, and high-resolution radar. It was detailed in IEEE Microwave and Wireless Technology Letters.
The new amplifier chip replaces an earlier Fraunhofer design built on gallium arsenide substrates with 35-nanometer gates, shrinking to 20-nanometer indium gallium arsenide transistors on silicon. This material shift enables the device to span an extraordinary 4-to-420-gigahertz range while maintaining a consistent 11-decibel gain, a combination previously difficult to achieve in a single monolithic circuit.
The chip's noise performance—between 2.8 and 7.7 decibels depending on configuration—and saturated output power of 6 to 8 dBm make it practical for real systems. Fraunhofer plans to demonstrate live measurements at European Microwave Week in London in October 2026, alongside partner FormFactor, and will present related research on HEMT modeling, mixers, and receivers at the conference.
This amplifier could accelerate the shift toward faster optical interconnects in data centers, which increasingly struggle with bandwidth limits as artificial intelligence workloads expand. It may also enable more precise radar and measurement instruments, potentially improving autonomous vehicle sensing, atmospheric monitoring, and scientific equipment. Researchers and manufacturers in high-frequency electronics could see new design possibilities, while data center operators might gain efficiency gains. However, commercial adoption depends on manufacturing scalability and cost, so widespread impact may take years to materialize.