Renesas Launches 100V GaN Power Transistors for Data Centers and Robotics
Renesas has expanded its gallium nitride portfolio with a new family of 100V enhancement-mode power transistors. The devices are designed for efficiency-critical uses such as AI data centers, humanoid robotics, factory automation, and solar microinverters. Renesas says the GaN FETs offer faster switching, better thermal performance, and lower switching losses than comparable devices.
Renesas’ new 100V E-mode GaN FET family includes four parts and is aimed at high-density power conversion. The company says these devices cut hard-switching FOM by as much as 35% and soft-switching FOM by up to 63% versus comparable GaN parts, while offering zero reverse recovery.
They use standard MOSFET-compatible packages and a 5 mΩ to 1.2 mΩ RDS(on) range, with bottom- or dual-side cooling. Renesas positions them for 800 VDC and 48V bus designs, where megahertz switching can shrink passives and improve efficiency.
More efficient power conversion in data centers, robotics, factories, tools, and solar microinverters could lower energy use and cooling demands. Engineers and manufacturers may benefit from easier migration from silicon designs, potentially speeding adoption. Consumers and workers might see smaller, more efficient equipment, though actual gains depend on system design and deployment.