Navitas Launches 2300 V SiC Modules for Grid and AI Data Center Power
Navitas Semiconductor has launched a line of silicon carbide power modules designed for very high voltages in energy and grid applications. The 2300 V full-bridge parts come in the SiCPAK package and target equipment such as solid-state transformers, large battery storage, solar inverters, and fast EV charging. Navitas also positions them as a key component for turning grid electricity into high-voltage DC for AI data center racks.
Navitas’ G4H08MT23GB4 family is a 2300 V full-bridge SiC module in the SiCPAK package, with 8 mΩ on-resistance. It uses the company’s fourth-generation GeneSiC TAP design and broadens its 2300 V and 3300 V ultra-high-voltage SiC lineup. Intended uses include solid-state transformers, grid-scale battery storage, solar inverters and megawatt EV charging.
The modules add an aluminum nitride AMB substrate with over 5 kV isolation, epoxy-resin potting rated for tenfold thermal conductivity versus silicone gel, and press-fit pins with double the per-pin current capacity. Optional pre-applied TIM is offered. Navitas plans AEC-Plus qualification beyond standard automotive and JEDEC tests, including extended cycling and high-voltage reliability checks.
The launch could matter to utilities, data-center operators, renewable-energy developers and EV-charging providers because higher-voltage SiC modules may make power conversion more compact and efficient. If adopted, such parts might support denser AI data-center power architectures and more capable grid equipment, though real effects depend on cost, qualification and system integration. Society may see indirect benefits through energy efficiency and infrastructure reliability, but the scale and timing remain uncertain.