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Technology · Semiconductors · published 2026-10-23 · via Tom's Hardware

Micron details G11 3D NAND with more than 400 layers and doubled bit density

Image via Tom's Hardware
Image via Tom's Hardware

Micron's G11 3D NAND is designed to double bit density while exceeding 400 layers. The company claims it can reach 42 Gb/mm² and a 5,400 MT/s interface speed, enabling SSDs with higher capacity and performance.

Expanded Detail

Micron has disclosed a next-generation 3D NAND design called G11. It is said to surpass 400 layers and to roughly double bit density compared with the prior generation, with a stated density of 42 Gb/mm².

The design also targets a 5,400 MT/s interface. Those attributes are presented as enabling solid-state drives with more capacity and faster performance.

Context

If these specifications reach products, higher-density NAND could affect SSD makers, data-center operators, and consumers by allowing more storage in the same footprint and potentially faster drives. The practical impact may depend on manufacturing yields, cost, and product timing, which the material does not detail.

Expanded detail and Context are AI-generated analysis; the linked article remains the authoritative source.
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