Mechanical pressure can control magnetic states in advanced quantum materials
Scientists discovered that applying a small mechanical strain can drastically alter the magnetic and electrical properties of altermagnets—exotic materials with potential for next-generation electronics. This finding opens new pathways for developing energy-efficient spintronic devices and advancing quantum computing technologies.
In November 2026, scientists at the U.S. Department of Energy’s Oak Ridge National Laboratory (ORNL) discovered that applying mechanical strain—via a small squeeze between titanium plates—can dramatically alter the magnetic and electrical properties of altermagnets, specifically manganese telluride (MnTe) and iron sulfide (FeS). Using neutron diffraction at ORNL’s Spallation Neutron Source, researchers observed changes in magnetic domain populations and the anomalous Hall effect under uniaxial strain. These findings were published in two consecutive papers in *Physical Review X* and *Advanced Materials*, with key contributors including Feng Ye of ORNL and Pengcheng Dai of Rice University. The experiments revealed that even minor mechanical pressure can tune magnetism, offering a potentially simple method to control electron spin without complex electrical or thermal inputs. This breakthrough builds on earlier discoveries, such as the 2026 confirmation of altermagnetism—a third type of magnetism distinct from ferromagnetism and antiferromagnetism—first reported by SLAC scientists using X-ray techniques.
The significance lies in the potential for spintronics, where data is processed via electron spin rather than charge, promising faster, lower-energy devices. Altermagnets are particularly promising because they combine non-magnetic electrical transport with tunable magnetic states. Researchers aim to harness strain-induced control to develop next-generation memory and logic
This discovery could significantly impact emerging technologies in computing and telecommunications by enabling more energy-efficient data processing. If strain-based control proves reliable at scale, it may reduce power consumption in devices ranging from smartphones to data centers—addressing a growing concern as digital infrastructure expands. The approach may also lower manufacturing complexity compared to traditional methods requiring high magnetic fields or precise doping. A comparable precedent is the development of piezoelectric materials in sensors and actuators, where mechanical deformation was harnessed for electronic control. However, unlike those systems, altermagnets offer a path to manipulate quantum states directly, potentially accelerating advances in quantum information science. The next phase will likely involve collaboration between material scientists, engineers, and semiconductor developers to translate lab-scale strain tuning into integrated circuits. Watch for p