China's CXMT launches trial HBM3E output, eyes 2027 volume production
CXMT has initiated risk production of HBM3E memory, according to a report. The company is sampling the chips with Alibaba's T-Head and Cambricon Technologies. Mass production could begin in 2027, though specifications remain undisclosed.
HBM3E packages pair a 1,024-bit interface with per-pin speeds up to 9.6 GT/s, yielding as much as 1.228 TB/s of bandwidth per stack. Stacks built from eight or twelve 24Gb DRAM dies deliver 24GB or 36GB capacities, respectively. CXMT's risk-production units are currently being evaluated by Alibaba's T-Head and Cambricon, with commercial adoption potentially arriving as soon as next year if qualification succeeds.
Producing HBM demands more than competitive DRAM dies; it requires precise die stacking, through-silicon vias, and high manufacturing yields. CXMT's aggressive capacity expansion is expected to support growing HBM output, since each package consumes multiple large DRAM dies. The company's progress narrows its gap with the three dominant memory makers, who have already moved to HBM4.
This milestone could reshape China's AI hardware supply chain, potentially reducing reliance on foreign memory suppliers for advanced accelerators. Domestic chip designers may gain more predictable access to high-bandwidth memory, which could accelerate AI system development within the country. Globally, increased competition in HBM production may influence pricing dynamics and technology diffusion, though CXMT's 2027 mass-production timeline leaves significant uncertainty about actual market impact.