U.S. Army Awards Navitas Contract to Develop Ultra-High-Voltage Silicon Carbide Technology

The U.S. Army selected Navitas Semiconductor to develop 10 kV silicon carbide power devices under the ALATTIS program, recognizing the company's leadership in ultra-high-voltage SiC innovation and domestic manufacturing capabilities. The project aims to create a novel domestic manufacturing process for next-generation SiC insulated-gate bipolar transistors and associated technologies for defense and critical infrastructure applications. Navitas' existing GeneSiC portfolio spans voltage ratings from 650V to 6.5kV with U.S.-anchored production.

Navitas has established itself as a pioneer in silicon carbide semiconductors over two decades, with notable achievements including early development of high-voltage thyristors and diodes. The company's existing GeneSiC product line already serves applications requiring substantial power handling, with devices operating between 650 volts and 6.5 kilovolts. This contract represents an opportunity to extend capabilities into the 10-kilovolt range through development of a new domestic manufacturing process.

The ALATTIS program represents a focused effort within the U.S. defense and critical infrastructure sectors to reduce dependence on foreign semiconductor production. By concentrating on insulated-gate bipolar transistors and associated components, the initiative targets high-power applications where domestic manufacturing security could provide strategic advantages. The program combines resources from the Army Research Laboratory and the Joint Experimentation and Technology Accelerator to accelerate commercialization timelines.